Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes

doi:10.1039/d0tc05335j

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	Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes
	J. Ou; X. Guo; L. Song; J. Lin; Y. Lv; Y. Fan; Y. Li; D. Zou; Z. Bao and X. Liu
	2021
Source Publication	Journal of Materials Chemistry C
ISSN	20507534
Volume	9 Issue:3 Pages:1025-1033
Abstract	Morphology has important effects on the performance and working stability of metal halide perovskite optoelectronic devices. It is widely believed that a uniform and pinhole-free perovskite film with closely arranged small grains is an ideal morphology for realizing high electroluminescence (EL) efficiency. This work presents an ethanolamine (EA) interface forin situinduction of perovskite nucleation and growth. Meanwhile a Lewis base of Tween 80 (T80) is employed as the defect passivator to suppress the defects in the bulk film. Under the combined effect of EA and T80, the optimal luminescence device displays a low opening voltage of 2.4 V, a peak current efficiency of 44.32 cd A1, a maximum external quantum efficiency of 12.7%, a maximum brightness of 50900 cd m2, and a prolonged operational lifetime of 4.5 h. The detailed investigation reveals the mechanism of the effect of the EA interface. The EA can interact with both the hole transporting layer poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and the perovskite emissive layer CsPbBr3together, acting as a connecting agent due to its special functional groups of hydroxyl and amine, thus inducing grain nucleation and growth. As a result, a compact and pinhole-free perovskite film was obtained by the introduction of EA. This work will give beneficial insight forin situmorphology control of perovskite grains. The Royal Society of Chemistry 2020.
DOI	10.1039/d0tc05335j
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Indexed By	SCI ; EI
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/65043
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	J. Ou,X. Guo,L. Song,et al. Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes[J]. Journal of Materials Chemistry C,2021,9(3):1025-1033.
APA	J. Ou.,X. Guo.,L. Song.,J. Lin.,Y. Lv.,...&Z. Bao and X. Liu.(2021).Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes.Journal of Materials Chemistry C,9(3),1025-1033.
MLA	J. Ou,et al."Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes".Journal of Materials Chemistry C 9.3(2021):1025-1033.

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中国科学院长春光学精密机械与物理研究所