Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes

doi:10.1039/d0tc05335j

CIOMP OpenIR

	Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes
	J. Ou; X. Guo; L. Song; J. Lin; Y. Lv; Y. Fan; Y. Li; D. Zou; Z. Bao and X. Liu
	2021
发表期刊	Journal of Materials Chemistry C
ISSN	20507534
卷号	9 期号:3 页码:1025-1033
摘要	Morphology has important effects on the performance and working stability of metal halide perovskite optoelectronic devices. It is widely believed that a uniform and pinhole-free perovskite film with closely arranged small grains is an ideal morphology for realizing high electroluminescence (EL) efficiency. This work presents an ethanolamine (EA) interface forin situinduction of perovskite nucleation and growth. Meanwhile a Lewis base of Tween 80 (T80) is employed as the defect passivator to suppress the defects in the bulk film. Under the combined effect of EA and T80, the optimal luminescence device displays a low opening voltage of 2.4 V, a peak current efficiency of 44.32 cd A1, a maximum external quantum efficiency of 12.7%, a maximum brightness of 50900 cd m2, and a prolonged operational lifetime of 4.5 h. The detailed investigation reveals the mechanism of the effect of the EA interface. The EA can interact with both the hole transporting layer poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and the perovskite emissive layer CsPbBr3together, acting as a connecting agent due to its special functional groups of hydroxyl and amine, thus inducing grain nucleation and growth. As a result, a compact and pinhole-free perovskite film was obtained by the introduction of EA. This work will give beneficial insight forin situmorphology control of perovskite grains. The Royal Society of Chemistry 2020.
DOI	10.1039/d0tc05335j
URL	查看原文
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65043
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. Ou,X. Guo,L. Song,et al. Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes[J]. Journal of Materials Chemistry C,2021,9(3):1025-1033.
APA	J. Ou.,X. Guo.,L. Song.,J. Lin.,Y. Lv.,...&Z. Bao and X. Liu.(2021).Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes.Journal of Materials Chemistry C,9(3),1025-1033.
MLA	J. Ou,et al."Ampholytic interface inducedin situgrowth of CsPbBr3for highly efficient perovskite light-emitting diodes".Journal of Materials Chemistry C 9.3(2021):1025-1033.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Ampholytic interface（5024KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载