2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

doi:10.1364/OE.428482

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	2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off
	Y. Zhao; J. Liang; Q. Zeng; Y. Li; P. Li; K. Fan; W. Sun; J. Lv; Y. Qin; Q. Wang; J. I. N. Tao and W. Wang
	2021
发表期刊	Optics Express
ISSN	10944087
卷号	29 期号:13 页码:20217-20228
摘要	In this article, 2000 PPI red silicon-based AlGaInP micro-LED arrays were fabricated and investigated. The AlGaInP epilayer was transferred onto the silicon substrate via the In-Ag bonding technique and an epilayer lift-off process. The silicon substrate with a high thermal conductivity could provide satisfactory heat dissipation, leading to micro-LED arrays that had a stable emission spectrum with increasing current density from 20 to 420 A/cm2 along with a red-shift of the peak position from 624.69 to 627.12 nm ( = 2.43 nm). Additionally, increasing the injection current density had little effect on the CIE (x, y) of the micro-LED arrays. Further, the I-V characteristics and light output power of micro-LED arrays with different pixel sizes demonstrated that the AlGaInP red micro-LED array on a silicon substrate had excellent electrical stability and optical output. 2021 Optical Society of America.
DOI	10.1364/OE.428482
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65018
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Zhao,J. Liang,Q. Zeng,et al. 2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off[J]. Optics Express,2021,29(13):20217-20228.
APA	Y. Zhao.,J. Liang.,Q. Zeng.,Y. Li.,P. Li.,...&J. I. N. Tao and W. Wang.(2021).2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off.Optics Express,29(13),20217-20228.
MLA	Y. Zhao,et al."2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off".Optics Express 29.13(2021):20217-20228.

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