Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN

doi:10.1016/j.apsusc.2020.146369

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	Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN
	K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
	2020
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	520 页码:9
摘要	AlGaN materials have a great prospect in ultraviolet and deep-ultraviolet optoelectronic devices, while the pointdefects impede their applications. In this report, we successfully suppressed the luminescence of Vcation-related point-defect in AlGaN materials. AlGaN epilayers were grown on AlN/sapphire template by metal-organic chemical vapor deposition and the mixed metal-organic flows were used to pretreat the surface of AlN/sapphire template. The luminescence intensity of (Vcation-complex)2− point-defects was reduced by the pretreatment, demonstrating the favorable suppression effect on the luminescence of (Vcation-complex)2− point-defects. The ephemeral metal-rich condition and metal-droplets on the AlN/sapphire template were believed to be partially responsible for the suppression. It also supported the conception that the 3.90 eV luminescence in AlN originated from the Vcation-related point-defects rather than the CN point-defects. The surface morphology was investigated and an optimized pretreating time of 60 s was obtained. The carrier recombination mechanism was also studied and the results revealed that dislocations not only could act as non-radiative recombination centers, but also could bind the excitons.
DOI	10.1016/j.apsusc.2020.146369
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收录类别	SCI ; EI
语种	英语
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64930
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li. Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN[J]. Applied Surface Science,2020,520:9.
APA	K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li.(2020).Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN.Applied Surface Science,520,9.
MLA	K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li."Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN".Applied Surface Science 520(2020):9.

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