Structural relaxation probed by resistance drift in amorphous germanium

doi:10.1088/2053-1591/ab80a9

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	Structural relaxation probed by resistance drift in amorphous germanium
	N. N. Dong,J. G. Xu,J. J. Cui and X. D. Wang
	2020
发表期刊	Materials Research Express
卷号	7 期号:3 页码:8
摘要	Amorphous germanium films with different thicknesses are deposited by magnetron sputtering (MS) method. Optical band gap and surface resistance are characterized. Our analysis reveals that there are three kinds of structural relaxation (SR) that may occur in amorphous germanium (a-Ge), and they are spontaneous SR (SSR), annealing-induced SR (AISR), and medium range order (MRO)-to-continuous random network (CRN) Sr Samples all demonstrate a band gap widening after these kinds of Sr The properties and mechanisms of SSR, AISR, and MRO-to-CRN SR are elucidated, respectively, which sheds some light on the controversies about SR in a-Ge films. In addition, some experimental results about SSR and AISR are also provided.
DOI	10.1088/2053-1591/ab80a9
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收录类别	SCI ; EI
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64912
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	N. N. Dong,J. G. Xu,J. J. Cui and X. D. Wang. Structural relaxation probed by resistance drift in amorphous germanium[J]. Materials Research Express,2020,7(3):8.
APA	N. N. Dong,J. G. Xu,J. J. Cui and X. D. Wang.(2020).Structural relaxation probed by resistance drift in amorphous germanium.Materials Research Express,7(3),8.
MLA	N. N. Dong,J. G. Xu,J. J. Cui and X. D. Wang."Structural relaxation probed by resistance drift in amorphous germanium".Materials Research Express 7.3(2020):8.

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