Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

doi:10.1016/j.matchemphys.2020.123279

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	Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers
	D. N. Talwar,H. H. Lin and Z. C. Feng
	2020
发表期刊	Materials Chemistry and Physics
ISSN	0254-0584
卷号	252 页码:16
摘要	Comprehensive experimental and theoretical studies are reported on the infrared reflectance (IRR)/transmittance (IRT) spectra to empathize the vibrational and structural properties of Si-doped GaN films grown on sapphire substrate using metal-organic chemical vapor deposition technique. Systematic analysis of the IRR/IRT spectra is achieved in the framework of a 4 x 4 transfer matrix methodology by meticulously including both the surface roughness and effective transition layer. With careful simulations, we have demonstrated that it possible to achieve a very good fit to the polarization dependent reflectivity spectra of Si-doped GaN/Sapphire allowing to ascertain film thickness d, charge carrier concentration N, root-mean squared roughness and many other parameters. In the context of Berreman effect, our investigations of IRT spectra for an ultrathin Si-doped GaN film in the oblique geometry has provided a direct evidence of identifying the optical phonons and coupled plasmon-longitudinal-optical phonon modes, in good agreement with the IRR and Raman scattering spectroscopy (RSS) data. From these results, we strongly believe that the measurements of IRT spectra in obliquely incident radiation should be considered as a complementary tool to the RSS for epitomizing doped III-Ns and/or any other ultrathin films of technologically important compound semiconductor materials.
DOI	10.1016/j.matchemphys.2020.123279
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收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64797
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D. N. Talwar,H. H. Lin and Z. C. Feng. Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers[J]. Materials Chemistry and Physics,2020,252:16.
APA	D. N. Talwar,H. H. Lin and Z. C. Feng.(2020).Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers.Materials Chemistry and Physics,252,16.
MLA	D. N. Talwar,H. H. Lin and Z. C. Feng."Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers".Materials Chemistry and Physics 252(2020):16.

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