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PbSe Quantum Dot Solar Cells Based on Directly Synthesized Semiconductive Inks
Y. Liu,F. Li,G. Z. Shi,Z. K. Liu,X. F. Lin,Y. Shi,Y. F. Chen,X. Meng,Y. Lv,W. Deng,X. Q. Pan and W. L. Ma
2020
发表期刊Acs Energy Letters
ISSN2380-8195
卷号5期号:12页码:3797-3803
摘要The unstable PbSe quantum dot (QD) surface requires tedious and complicated synthetic protocols and renders them substantially underdeveloped compared to PbS QDs. Here, we describe a direct synthesis of PbSe QD inks at room temperature. In comparison to the conventional three-step synthesis, our strategy simplifies the fabrication process to one step and reduces the preparation cost by a factor of eight. A photovoltaic device based on these PbSe QD inks has achieved a photovoltaic conversion efficiency (PCE) of 10.38% with high device stability, which is one of the highest PCEs for all reported PbSe QD solar cells. More importantly, the obtained ink has demonstrated the best colloidal stability by far compared with all the reported lead chalcogenides (PbX) QD inks for photovoltaic application. This simple and low-cost synthesis will facilitate ink storage and transport and may ignite a new round of research efforts on the optoelectronic applications of PbSe QDs.
DOI10.1021/acsenergylett.0c02011
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收录类别SCI ; EI
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/64780
专题中国科学院长春光学精密机械与物理研究所
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Y. Liu,F. Li,G. Z. Shi,Z. K. Liu,X. F. Lin,Y. Shi,Y. F. Chen,X. Meng,Y. Lv,W. Deng,X. Q. Pan and W. L. Ma. PbSe Quantum Dot Solar Cells Based on Directly Synthesized Semiconductive Inks[J]. Acs Energy Letters,2020,5(12):3797-3803.
APA Y. Liu,F. Li,G. Z. Shi,Z. K. Liu,X. F. Lin,Y. Shi,Y. F. Chen,X. Meng,Y. Lv,W. Deng,X. Q. Pan and W. L. Ma.(2020).PbSe Quantum Dot Solar Cells Based on Directly Synthesized Semiconductive Inks.Acs Energy Letters,5(12),3797-3803.
MLA Y. Liu,F. Li,G. Z. Shi,Z. K. Liu,X. F. Lin,Y. Shi,Y. F. Chen,X. Meng,Y. Lv,W. Deng,X. Q. Pan and W. L. Ma."PbSe Quantum Dot Solar Cells Based on Directly Synthesized Semiconductive Inks".Acs Energy Letters 5.12(2020):3797-3803.
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