Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser

doi:10.3788/CO.2019-0159

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	Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser
	Y.-J. Gao,F. Chen,Q.-K. Pan,H.-H. Yu,H.-C. Li and Y.-P. Tian
	2020
发表期刊	Chinese Optics
ISSN	20951531
卷号	13 期号:3 页码:577-585
摘要	The physical mechanism are studied for ultra-short pulse CO2 laser output realized by semiconductor switching technology. Firstly, based on the analysis of the generation, recombination and diffusion mechanism of laser-produced carriers, we introduce direct absorption, Auger recombination, plasmon-assisted recombination, an ambipolar diffusion process and according to Drude theory, we improve the theoretical model of semiconductor switching. Secondly, we simulate and analyze the generation of ultra-short CO2 pulses by two-stage semiconductor optical switches employing this model. The results show that the model is in good agreement with the latest experimental results reported abroad, which implies the rationality and correctness of the model. Finally, the model is used to analyze the effect of control pulse duration on the efficiency of the two-stage switching. It is found that a short control pulse is more conducive to intercepting high-quality ultra-short CO2 pulses accurately and efficiently. Semiconductor switching is an effective technique to realize the output of an ultra-short CO2 laser with an adjustable pulse width. 2020, China Science Publishing & Media LTD. All right reserved.
DOI	10.3788/CO.2019-0159
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收录类别	EI
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64695
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.-J. Gao,F. Chen,Q.-K. Pan,H.-H. Yu,H.-C. Li and Y.-P. Tian. Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser[J]. Chinese Optics,2020,13(3):577-585.
APA	Y.-J. Gao,F. Chen,Q.-K. Pan,H.-H. Yu,H.-C. Li and Y.-P. Tian.(2020).Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser.Chinese Optics,13(3),577-585.
MLA	Y.-J. Gao,F. Chen,Q.-K. Pan,H.-H. Yu,H.-C. Li and Y.-P. Tian."Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser".Chinese Optics 13.3(2020):577-585.

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