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High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining
J. Zhang,H. Peng,X. Fu,L. Qin,Y. Ning and L. Wang
2020
发表期刊Zhongguo Jiguang/Chinese Journal of Lasers
ISSN2587025
卷号47期号:7
摘要High-power semiconductor lasers operating at a wavelength of 800 nm are one of the preferred laser sources for long-distance illumination. However, owing to poor beam quality and brightness, it is difficult for 800-nm semiconductor lasers to transmit over long distances. Therefore, it is essential to improve the beam quality and brightness. For spectral beam combining method, the output power and brightness are improved while preserving the beam quality of a laser unit. Based on this method, a high-power laser source comprising 10 800-nm laser arrays is developed by optimizing the spectral width and the combining structure according to the gain spectra of laser bars, with a continuous power of 363.5 W, beam quality of 4.17 mmmrad, brightness of 212 MW/(cm2sr), and electro-optic conversion efficiency of 40%. Through further structural optimization and polarization coupling, a kW-class high-power 800-nm semiconductor laser can be obtained, providing a high-performance laser source for long-distance laser illumination. 2020, Chinese Lasers Press. All right reserved.
DOI10.3788/CJL202047.0701021
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/64559
专题中国科学院长春光学精密机械与物理研究所
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J. Zhang,H. Peng,X. Fu,L. Qin,Y. Ning and L. Wang. High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining[J]. Zhongguo Jiguang/Chinese Journal of Lasers,2020,47(7).
APA J. Zhang,H. Peng,X. Fu,L. Qin,Y. Ning and L. Wang.(2020).High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining.Zhongguo Jiguang/Chinese Journal of Lasers,47(7).
MLA J. Zhang,H. Peng,X. Fu,L. Qin,Y. Ning and L. Wang."High-Brightness 800-nm Semiconductor Laser Source Based on Spectral Beam Combining".Zhongguo Jiguang/Chinese Journal of Lasers 47.7(2020).
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