A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

doi:10.1039/c9tc06416h

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	A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction
	Y. X. Zhu,K. W. Liu,Q. Ai,Q. C. Hou,X. Chen,Z. Z. Zhang,X. H. Xie,B. H. Li and D. Z. Shen
	2020
发表期刊	Journal of Materials Chemistry C
ISSN	2050-7526
卷号	8 期号:8 页码:2719-2724
摘要	A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated. A high quality p-GaN film was grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy and subsequently an n-ZnMgO layer was deposited on p-GaN by a metal organic chemical vapor deposition technique. The p-GaN/n-ZnMgO heterojunction photodetector shows a clear rectifying I-V characteristic with a turn-on voltage of 2.5 V. At zero-bias voltage, the device shows a high peak responsivity of 196 mA W-1 at 362 nm. The 10-90% rise time and 90-10% decay time of the device can be as short as 1.7 ms and 3.3 ms, respectively. The excellent crystal quality and electrical properties of p-GaN play an important role in the high performance of the photodiode. This work provides a feasible way for the development of high-performance heterojunction self-powered UV detectors.
DOI	10.1039/c9tc06416h
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收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64553
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. X. Zhu,K. W. Liu,Q. Ai,Q. C. Hou,X. Chen,Z. Z. Zhang,X. H. Xie,B. H. Li and D. Z. Shen. A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction[J]. Journal of Materials Chemistry C,2020,8(8):2719-2724.
APA	Y. X. Zhu,K. W. Liu,Q. Ai,Q. C. Hou,X. Chen,Z. Z. Zhang,X. H. Xie,B. H. Li and D. Z. Shen.(2020).A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction.Journal of Materials Chemistry C,8(8),2719-2724.
MLA	Y. X. Zhu,K. W. Liu,Q. Ai,Q. C. Hou,X. Chen,Z. Z. Zhang,X. H. Xie,B. H. Li and D. Z. Shen."A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction".Journal of Materials Chemistry C 8.8(2020):2719-2724.

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