Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification

doi:10.1016/j.apsusc.2020.146218

CIOMP OpenIR

	Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification
	B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou
	2020
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	518 页码:7
摘要	We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by introducing voids during growth. Voids are embedded into AlN epilayers through a growth-mode transition from island growth to step flow growth. Such voids significantly facilitated the underlying dislocations annihilation as demonstrated by the transmission electron microscopy (TEM) image. For the 3 mu m-thick AlN film grown on FSS, the full width at half maximum of the X-ray rocking curve was 57/260 arcsec for (0 0 2)/(1 0 2) reflection and a threading dislocation density of 1.7 x 10(8) cm(-2) was determined from plain-view TEM image. Moreover, the voids provided an additional stress relief channel in the AlN film grown on FSS, resulting in a tensile stress comparable to that of grown on nano-patterned sapphire substrate (NPSS). The measured lattice constants and Raman shift of AlN-E-2 (high) peak verified the 3 mu m-thick AlN film grown on FSS is nearly stress free at room temperature. Taking advantages of the deliberately embedded voids, a crack-free and atomically flat AlN film was grown on FSS. The strategy put forward in this work to obtaining high-quality AlN films on FSS is much cost-efficient, which is believed to hold great promise for commercialization in AlN-based devices.
DOI	10.1016/j.apsusc.2020.146218
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64547
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou. Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification[J]. Applied Surface Science,2020,518:7.
APA	B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou.(2020).Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification.Applied Surface Science,518,7.
MLA	B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou."Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification".Applied Surface Science 518(2020):7.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Growth of high-quali（2601KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载