Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures

doi:10.1088/1361-6528/ab6676

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	Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures
	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen
	2020
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	31 期号:14 页码:5
摘要	To widen the detection wavelength range and improve the detection sensitivity of SiC-based optoelectronic devices, the SiC/Ge/graphene heterojunction was fabricated by using wet transfer of the graphene following chemical vapor deposition. The Ge films on 4H-SiC(0001) have polycrystalline structure with nano-wire (NWs) and submicron spherical island (SIs) features. Due to the distinct light trapping effect of the Ge NWs, the SiC/GeNWs/graphene heterojunction has an absorbance of more than 90% in the 500-1600 nm range, which is higher than the SiC/GeSIs/graphene heterojunction. And the SiC/GeNWs/graphene heterojunction photodetector exhibits rectification ratio up to 25 at 2 V and stable photoresponse to the NIR light at zero voltage bias.
DOI	10.1088/1361-6528/ab6676
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收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64515
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen. Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures[J]. Nanotechnology,2020,31(14):5.
APA	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen.(2020).Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures.Nanotechnology,31(14),5.
MLA	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen."Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures".Nanotechnology 31.14(2020):5.

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