The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution

doi:10.1016/j.chemphys.2019.110397

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	The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution
	C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig
	2020
发表期刊	Chemical Physics
ISSN	0301-0104
卷号	529 页码:4
摘要	High aspect ratio gratings (HARG) can be obtained by anisotropic etching of Si <1 1 0>/<1 1 1>. Usually isopropyl alcohol (IPA) is added to the solution in order to smooth Si <1 1 0> surface. However, the addition of IPA can reduce the etching rate ratio of Si <1 1 0>/<1 1 1>, which leads to a reduction of grating's aspect ratio. The effects of another additive TMDD-PA (TMDD: IPA = 1: 1 in wt%) were discussed. The experimental data indicates that TMDD-PA behaves better than IPA when smoothing Si <1 1 0> surface, and etching rate ratio of Si <1 1 0>/<1 1 1> increases with the increasing concentration of TMDD-PA. Mechanism of IPA and TMDD-PA in etching were analyzed. Molecules of IPA and TMDD behave differently on Si surfaces, and they have different impacts on H2O molecules.
DOI	10.1016/j.chemphys.2019.110397
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收录类别	SCI
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64481
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig. The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution[J]. Chemical Physics,2020,529:4.
APA	C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig.(2020).The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution.Chemical Physics,529,4.
MLA	C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig."The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution".Chemical Physics 529(2020):4.

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