Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images

doi:10.7498/aps.69.20200099

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	Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images
	B. Y. Liu,W. T. Song,Z. H. Liu,X. J. Sun,K. M. Wang,Y. K. Wang,C. Y. Zhang,K. B. Chen,G. Z. Xu,K. Xu and D. B. Li
	2020
发表期刊	Acta Physica Sinica
ISSN	1000-3290
卷号	69 期号:12 页码:9
摘要	AlGaN is a key material for deep ultraviolet optoelectronic and electronic devices. With the increase of the Al composition ratio, the phase separation on the surface, caused by small-scale compositional fluctuations, is prone to affecting the performance of the device. In order to explore the mechanism of the phase separation on a nanoscale, the AlGaN wafers with different quantities of Al compositions are investigated by the confocal photoluminescence spectroscopy and the single-pass Kelvin force probe microscopy. The composition ratios of Al for the three samples are about 0.3, 0.5, and 0.7, respectively. The single-pass Kelvin force probe microscopy based on dual-frequency phase-locking is used to obtain high spatially resolved (about 10 nm) surface potential images. In the area where the phase separation phenomenon is obvious in the photoluminescence spectrum, the sharp change of the surface potential can be observed at the irregular steps and the edges of the surface pits. The potential changes can be ascribed to the inhomogeneous composition distribution. In the area where the topography turns into step flow, the surface pits shrink and merge. No obvious surface potential domain boundaries appear at the steps nor on the edges of the surface pits. Meanwhile, the phase separation phenomenon in the photoluminescence spectrum almost disappears. Our experiments show that the steps and the edges of the surface pits on AlGaN surfaces are main reasons for small-scale compositional fluctuations and the phase separation in the spectrum. Combining with in-situ confocal photoluminescence spectra, high spatially resolved surface potential image by single-pass Kelvin force probe microscopy is an effective method to characterize the phase separation on AlGaN surface on a nanoscale.
DOI	10.7498/aps.69.20200099
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收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/64355
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	B. Y. Liu,W. T. Song,Z. H. Liu,X. J. Sun,K. M. Wang,Y. K. Wang,C. Y. Zhang,K. B. Chen,G. Z. Xu,K. Xu and D. B. Li. Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images[J]. Acta Physica Sinica,2020,69(12):9.
APA	B. Y. Liu,W. T. Song,Z. H. Liu,X. J. Sun,K. M. Wang,Y. K. Wang,C. Y. Zhang,K. B. Chen,G. Z. Xu,K. Xu and D. B. Li.(2020).Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images.Acta Physica Sinica,69(12),9.
MLA	B. Y. Liu,W. T. Song,Z. H. Liu,X. J. Sun,K. M. Wang,Y. K. Wang,C. Y. Zhang,K. B. Chen,G. Z. Xu,K. Xu and D. B. Li."Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images".Acta Physica Sinica 69.12(2020):9.

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