Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

doi:10.1109/jphot.2019.2909887

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	Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography
	H.Chen; Y.Y.Chen; F.Gao; L.Qin; C.Chen; P.Jia; Y.W.Huang
	2019
发表期刊	Ieee Photonics Journal
ISSN	1943-0655
卷号	11 期号:3 页码:9
摘要	A narrow-strip single-longitudinal-mode gain-coupled distributed feedback semiconductor laser with a central wavelength of approximately 670 nm is demonstrated. We fabricate a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only. The maximum output power from the fiber of the device with butterfly package is 48.1 mW at 100 mA and its slope efficiency is 0.79 W/A. The laser can be continuously tuned from 670.750 to 670.784 nm with a side-mode suppression ratio of over 40 dB, covering the absorptive peak of lithium atoms. Our easily fabricated devices have great potential as light sources in many applications such as lithium atom detectors.
关键词	Semiconductor laser,gain-coupled,distributed-feedback,continuous,tunability,lithium isotope-separation
DOI	10.1109/jphot.2019.2909887
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63461
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	H.Chen,Y.Y.Chen,F.Gao,et al. Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography[J]. Ieee Photonics Journal,2019,11(3):9.
APA	H.Chen.,Y.Y.Chen.,F.Gao.,L.Qin.,C.Chen.,...&Y.W.Huang.(2019).Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography.Ieee Photonics Journal,11(3),9.
MLA	H.Chen,et al."Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography".Ieee Photonics Journal 11.3(2019):9.

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