Van der Waals Epitaxy: A new way for growth of III-nitrides

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	Van der Waals Epitaxy: A new way for growth of III-nitrides
	Y.Chen; Y.P.Jia; Z.M.Shi; X.J.Sun; D.B.Li
	2019
发表期刊	Science China-Technological Sciences
ISSN	1674-7321
卷号	63 期号:3 页码:528-530
关键词	gan,layer,aln,Engineering,Materials Science
DOI	10.1007/s11431-019-1488-y
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63444
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.Chen,Y.P.Jia,Z.M.Shi,et al. Van der Waals Epitaxy: A new way for growth of III-nitrides[J]. Science China-Technological Sciences,2019,63(3):528-530.
APA	Y.Chen,Y.P.Jia,Z.M.Shi,X.J.Sun,&D.B.Li.(2019).Van der Waals Epitaxy: A new way for growth of III-nitrides.Science China-Technological Sciences,63(3),528-530.
MLA	Y.Chen,et al."Van der Waals Epitaxy: A new way for growth of III-nitrides".Science China-Technological Sciences 63.3(2019):528-530.