Effect of crystalline state on conductive filaments forming process in resistive switching memory devices

doi:10.1016/j.mtcomm.2019.100540

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	Effect of crystalline state on conductive filaments forming process in resistive switching memory devices
	T.Guo; H.Elshekh; Z.Yu; B.Yu; D.Wang; M.S.Kadhim; Y.Z.Chen
	2019
发表期刊	Materials Today Communications
ISSN	2352-4928
卷号	20 期号:5
摘要	It is well known that the resistive switching memory is considered as a promising high-performance storage technology to satisfy the demand of information explosion. In this work, the resistive switching memory device with Ag/Cu(In, Ga)Se-2/Mo structure was firstly fabricated, and further the influence of Cu(In, Ga)S-2 (CIGS) crystalline state on resistive switching performance was investigated. The results show that the HRS/LRS ratio increased from 1.7 to 8.2 as the CIGS layer transferring from amorphous to crystalline, thus the model of crystal state affecting the conducive filament forming process was demonstrated. This work provides an operable method to control the resistive switching performance by tuning the crystal state.
关键词	Cu(In, Ga)Se-2,Crystalline state,Conductive filaments,Memory device,current-voltage characteristics
DOI	10.1016/j.mtcomm.2019.100540
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63354
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	T.Guo,H.Elshekh,Z.Yu,et al. Effect of crystalline state on conductive filaments forming process in resistive switching memory devices[J]. Materials Today Communications,2019,20(5).
APA	T.Guo.,H.Elshekh.,Z.Yu.,B.Yu.,D.Wang.,...&Y.Z.Chen.(2019).Effect of crystalline state on conductive filaments forming process in resistive switching memory devices.Materials Today Communications,20(5).
MLA	T.Guo,et al."Effect of crystalline state on conductive filaments forming process in resistive switching memory devices".Materials Today Communications 20.5(2019).

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