Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch

doi:10.1038/s41598-019-40120-9

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	Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch
	H.P.Hu; S.J.Zhou; H.Wan; X.T.Liu; N.Li; H.H.Xu
	2019
发表期刊	Scientific Reports
ISSN	2045-2322
卷号	9 期号:9
摘要	Here we demonstrate high-brightness lnGaN/GaN green light emitting diodes (LEDs) with in-situ low-temperature GaN (LT-GaN) nucleation layer (NL) and ex-situ sputtered AIN NL on 4-inch patterned sapphire substrate. Compared to green LEDs on LT-GaN (19 nm)/sapphire template, green LEDs on sputtered AIN (19 nm)/template has better crystal quality while larger in-plane compressive strain. As a result, the external quantum efficiency (EQE) of green LEDs on sputtered AIN (19 nm)/sapphire template is lower than that of green LEDs on LT-GaN (19 nm)/sapphire template due to strain-induced quantum-confined Stark effect (QCSE). We show that the in-plane compressive strain of green LEDs on sputtered AIN/sapphire templates can be manipulated by changing thickness of the sputtered AIN NL. As the thickness of sputtered AIN NL changes from 19 nm to 40 nm, the green LED on sputtered AIN (33 nm)/sapphire template exhibits the lowest in-plane compressive stress and the highest EQE. At 20A/cm(2), the EQE of 526 nm green LEDs on sputtered AIN (33 nm)/sapphire template is 36.4%, about 6.1% larger than that of the green LED on LT-GaN (19 nm)/sapphire template. Our experimental data suggest that high-efficiency green LEDs can be realized by growing lnGaN/GaN multiple quantum wells (MQWs) on sputtered AIN/sapphire template with reduced in-plane compressive strain and improved crystal quality.
关键词	light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics
DOI	10.1038/s41598-019-40120-9
URL	查看原文
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63325
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	H.P.Hu,S.J.Zhou,H.Wan,et al. Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch[J]. Scientific Reports,2019,9(9).
APA	H.P.Hu,S.J.Zhou,H.Wan,X.T.Liu,N.Li,&H.H.Xu.(2019).Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch.Scientific Reports,9(9).
MLA	H.P.Hu,et al."Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch".Scientific Reports 9.9(2019).

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