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1Tb/s all-optical XOR and AND gates using quantum-dot semiconductor optical amplifier-based turbo-switched Mach-Zehnder interferometer
A.Kotb; K.E.Zoiros; C.L.Guo
2019
发表期刊Journal of Computational Electronics
ISSN1569-8025
卷号18期号:2页码:628-639
摘要The turbo-switch (TS) architecture conceived for speeding up the response of conventional semiconductor optical amplifiers (SOAs) is combined for the first time with the exceptional ultrafast capability of quantum-dot (QD) SOAs. The possibility of exploiting this combination in the Mach-Zehnder interferometer (MZI) for implementing fundamental all-optical (AO) XOR and AND logic gates run at 1Tb/s is numerically investigated, assessed, and verified. The simulation results demonstrate the superiority of the QDSOA-based TS-MZI scheme over its QDSOA-based MZI counterpart, as quantified by the improved quality factor, which can be achieved under more favorable operating conditions. The outcomes of the conducted theoretical treatment can help execute AO signal processing tasks with enhanced performance while keeping pace with the perpetual increase of single-channel data rates in an efficient and affordable manner.
关键词All-optical AND gate,Quantum-dot semiconductor,optical amplifier,Turbo-switch,Mach-Zehnder interferometer,2-photon absorption
DOI10.1007/s10825-019-01329-z
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收录类别SCI ; EI
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63286
专题中国科学院长春光学精密机械与物理研究所
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A.Kotb,K.E.Zoiros,C.L.Guo. 1Tb/s all-optical XOR and AND gates using quantum-dot semiconductor optical amplifier-based turbo-switched Mach-Zehnder interferometer[J]. Journal of Computational Electronics,2019,18(2):628-639.
APA A.Kotb,K.E.Zoiros,&C.L.Guo.(2019).1Tb/s all-optical XOR and AND gates using quantum-dot semiconductor optical amplifier-based turbo-switched Mach-Zehnder interferometer.Journal of Computational Electronics,18(2),628-639.
MLA A.Kotb,et al."1Tb/s all-optical XOR and AND gates using quantum-dot semiconductor optical amplifier-based turbo-switched Mach-Zehnder interferometer".Journal of Computational Electronics 18.2(2019):628-639.
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