CIOMP OpenIR
990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect
Y.X.Lei; Y.Y.Chen; F.Gao; D.Z.Ma; P.Jia; Q.Cheng; H.Wu
2019
发表期刊Ieee Photonics Journal
ISSN1943-0655
卷号11期号:1页码:9
摘要High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at singlelongitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05 degrees, the beam quality factor M-2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single-mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
关键词Semiconductor lasers,gain-coupled DFB,single-longitudinal mode,narrow,linewidth,semiconductor-lasers,diodes,Engineering,Optics,Physics
DOI10.1109/jphot.2019.2893961
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收录类别SCI ; EI
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63279
专题中国科学院长春光学精密机械与物理研究所
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Y.X.Lei,Y.Y.Chen,F.Gao,et al. 990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect[J]. Ieee Photonics Journal,2019,11(1):9.
APA Y.X.Lei.,Y.Y.Chen.,F.Gao.,D.Z.Ma.,P.Jia.,...&H.Wu.(2019).990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect.Ieee Photonics Journal,11(1),9.
MLA Y.X.Lei,et al."990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect".Ieee Photonics Journal 11.1(2019):9.
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