Laser damage characteristics of indium-tin-oxide film and polyimide film

doi:10.1016/j.infrared.2019.03.028

CIOMP OpenIR

	Laser damage characteristics of indium-tin-oxide film and polyimide film
	X.F.Liu; L.P.Peng; Y.Q.Gao; Y.A.Zhao; Y.G.Liu; D.W.Li
	2019
发表期刊	Infrared Physics & Technology
ISSN	1350-4495
卷号	99 页码:80-85
摘要	This report focuses on the damage characteristics of the indium-tin-oxide (ITO) layer and the polyimide (PI) layer, which are two constituent components of a LCD. This investigation is different from the previous study, in which the alignment layer was deposited directly on a glass substrate. The PI alignment layer is pinned on the ITO film to imitate the structure of the LCD as much as possible in our current study. The damage process of the ITO/Glass sample involves melting, vaporization near the laser-induced damage threshold (LIDT), and removal at a higher fluence. However, the damage process of the PI/ITO/Glass sample involves thermally induced plastic deformation, followed by cooling when the irradiation fluence is near the LIDT, and rupture when the irradiation fluence is higher. The LIDTs of the PI/ITO/Glass samples, as determined by the on-line CCD detection technique, are higher than those of the ITO/Glass samples. The favorable mechanical properties of the PI are primarily responsible for this result.
关键词	Near-infrared laser damage,ITO film,PI film,substrate,Instruments & Instrumentation,Optics,Physics
DOI	10.1016/j.infrared.2019.03.028
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63180
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X.F.Liu,L.P.Peng,Y.Q.Gao,et al. Laser damage characteristics of indium-tin-oxide film and polyimide film[J]. Infrared Physics & Technology,2019,99:80-85.
APA	X.F.Liu,L.P.Peng,Y.Q.Gao,Y.A.Zhao,Y.G.Liu,&D.W.Li.(2019).Laser damage characteristics of indium-tin-oxide film and polyimide film.Infrared Physics & Technology,99,80-85.
MLA	X.F.Liu,et al."Laser damage characteristics of indium-tin-oxide film and polyimide film".Infrared Physics & Technology 99(2019):80-85.

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