Dependence of Thermal Annealing on Transparent Conducting Properties of HoF3-Doped ZnO Thin Films

doi:10.1088/0256-307x/36/5/057303

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	Dependence of Thermal Annealing on Transparent Conducting Properties of HoF3-Doped ZnO Thin Films
	J.S.Luo; J.Lin; L.G.Zhang; X.Y.Guo; Y.F.Zhu
	2019
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	36 期号:5 页码:4
摘要	A kind of n-type HoF3-doped zinc oxide-based transparent conductive film has been developed by electron beam evaporation and studied under thermal annealing in air and vacuum at temperatures 100-500 degrees C. Effective substitutional dopings of F to O and Ho to Zn are realized for the films with smooth surface morphology and average grain size of about 50nm. The hall mobility, electron concentration, resistivity and work function for the as-deposited films are 47.89 cm(2)/Vs, 1.39x 10(20) cm(-3), 9.37 x 10(-4)Omega.cm and 5.069 eV, respectively. In addition, the average transmittance in the visible region (400-700 nm) approximates to 87%. The HoF3:ZnO films annealed in air and vacuum can retain good optoelectronic properties under 300 degrees C, thereinto, more stable electrical properties can be found in the air-annealed films than in the vacuum-annealed films, which is assumed to be a result of improved nano-crystalline lattice quality. The optimized films for most parameters can be obtained at 200 degrees C for the air-annealing case and at room temperature for the vacuum annealing case. The advisable optoelectronic properties imply that HoF3:ZnO can facilitate carrier injection and has promising applications in energy and light sources as transparent electrodes.
关键词	layer,Physics
DOI	10.1088/0256-307x/36/5/057303
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63153
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J.S.Luo,J.Lin,L.G.Zhang,et al. Dependence of Thermal Annealing on Transparent Conducting Properties of HoF3-Doped ZnO Thin Films[J]. Chinese Physics Letters,2019,36(5):4.
APA	J.S.Luo,J.Lin,L.G.Zhang,X.Y.Guo,&Y.F.Zhu.(2019).Dependence of Thermal Annealing on Transparent Conducting Properties of HoF3-Doped ZnO Thin Films.Chinese Physics Letters,36(5),4.
MLA	J.S.Luo,et al."Dependence of Thermal Annealing on Transparent Conducting Properties of HoF3-Doped ZnO Thin Films".Chinese Physics Letters 36.5(2019):4.

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