Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes

doi:10.1021/acs.jpcc.9b02608

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	Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes
	B.S.Qiao; Z.Z.Zhang; X.H.Xie; B.H.Li; K.X.Li; X.Chen
	2019
发表期刊	Journal of Physical Chemistry C
ISSN	1932-7447
卷号	123 期号:30 页码:18516-18520
摘要	Metal semiconductor-metal structured photodetectors based on beta-Ga2O3 thin films were fabricated. Because of the high dark-resistance and considerable photoconduction, extremely uneven distribution of electric field is formed in the device under solar-blind UV light-illumination when a bias is added. Avalanche multiplication takes place in the high-field area near the electrode edges. Responsivity up to 46 A/W and the corresponding external quantum efficiency of 23 000% are observed. The photodetector shows a peak response at 248 nm, a sharp cut off edge at 262 nm (at -20 dB), and a fast response speed with a fall time of about 26.7 mu s. Because of the ultralow response out of band, the rejection ratio R-254/365nm is larger than 7 orders of magnitude, where the illumination intensity at 254 and 365 nm are 0.5 and 1.2 mW/cm(2), respectively.
关键词	photodetector,transparent,Chemistry,Science & Technology - Other Topics,Materials Science
DOI	10.1021/acs.jpcc.9b02608
收录类别	SCI ; EI
语种	英语
引用统计	被引频次：54[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63114
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	B.S.Qiao,Z.Z.Zhang,X.H.Xie,et al. Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes[J]. Journal of Physical Chemistry C,2019,123(30):18516-18520.
APA	B.S.Qiao,Z.Z.Zhang,X.H.Xie,B.H.Li,K.X.Li,&X.Chen.(2019).Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes.Journal of Physical Chemistry C,123(30),18516-18520.
MLA	B.S.Qiao,et al."Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes".Journal of Physical Chemistry C 123.30(2019):18516-18520.

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