Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells

doi:10.1016/j.materresbull.2019.02.027

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	Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells
	Y.Song; L.G.Zhang; Y.G.Zeng; Y.Y.Chen; L.Qin; Y.L.Zhou
	2019
发表期刊	Materials Research Bulletin
ISSN	0025-5408
卷号	115 页码:196-200
摘要	A series of compressively strained AlGaInAs quantum well (QW) structures with different annealing treatment durations at 170 degrees C were investigated by temperature-dependent photoluminescence (PL). An abnormal S-shaped behavior in emission energy and a non-monotone evolution in spectral band width were observed at low temperature. A significant negative linear correlation between full width at half maximum (FWHM) and emission energy at different test temperature was exhibited in samples with different heat treatment durations. The highly linear relation demonstrated that the dependencies and relationships between PL peak energy and FWHM vs temperature are consistent. The anomalous blue shift and concomitant narrowing of FWHM in AlGaInAs QW were affected by lattice strain fluctuations due to the difference of thermal expansion coefficients between adjacent layers and strong carriers' localization at low temperature.
关键词	Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science
DOI	10.1016/j.materresbull.2019.02.027
收录类别	SCI ; EI
语种	英语
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63072
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.Song,L.G.Zhang,Y.G.Zeng,et al. Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells[J]. Materials Research Bulletin,2019,115:196-200.
APA	Y.Song,L.G.Zhang,Y.G.Zeng,Y.Y.Chen,L.Qin,&Y.L.Zhou.(2019).Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells.Materials Research Bulletin,115,196-200.
MLA	Y.Song,et al."Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells".Materials Research Bulletin 115(2019):196-200.

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