Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

doi:10.1103/PhysRevB.100.195407

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	Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
	P.Steindl; E.M.Sala; B.Alen; D.F.Marron; D.Bimberg
	2019
发表期刊	Physical Review B
ISSN	2469-9950
卷号	100 期号:19 页码:19
摘要	The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.
关键词	single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics
DOI	10.1103/PhysRevB.100.195407
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收录类别	SCI
语种	英语
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文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63069
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	P.Steindl,E.M.Sala,B.Alen,et al. Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix[J]. Physical Review B,2019,100(19):19.
APA	P.Steindl,E.M.Sala,B.Alen,D.F.Marron,&D.Bimberg.(2019).Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix.Physical Review B,100(19),19.
MLA	P.Steindl,et al."Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix".Physical Review B 100.19(2019):19.

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