Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour

doi:10.1016/j.jcis.2019.06.076

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	Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour
	B.Sun; T.Guo; G.D.Zhou; S.Ranjan; W.T.Hou; Y.M.Hou; Y.Zhao
	2019
发表期刊	Journal of Colloid and Interface Science
ISSN	0021-9797
卷号	553 页码:682-687
摘要	The resistive switching effect is a great physical phenomenon that the resistance of a material can be reversibly changed by applying an electric pulse, which is useful to constructing the nonvolatile resistance random access memory (RRAM) in the next generation of memory system. In this work, a sandwich structure (ITO/WO3/AZO) was prepared by using WO3 film (similar to 300 nm) as the dielectric layer meanwhile indium tin oxide (ITO) as the top electrode and aluminium-doped zinc oxide (AZO) as the bottom electrode. An enhanced resistive switching memory behavior was observed in the sample processed by light-illumination. Furthermore, the set voltage (V-set) and reset voltage (V-reset) are increased but the HRS/LRS resistance ratio is decreased with the increasing of illumination time for 600 degrees C annealed sample. Through further analysis, a physical model on the tunneling of photon-generated carrier in the Schottky barrier layer driven by electric pulse is proposed to explain the enhanced resistive switching memory behavior. The suggested mechanism is highly pivotal for the resistive switching phenomenon to be properly applied in the nonvolatile RRAM device. (C) 2019 Elsevier Inc. All rights reserved.
关键词	Resistive switching,Tunneling,Photon-generated carrier,Schottky,barrier,Memory device,wo3 nanoflakes,resistance,mechanism,device,Chemistry
DOI	10.1016/j.jcis.2019.06.076
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63064
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	B.Sun,T.Guo,G.D.Zhou,et al. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour[J]. Journal of Colloid and Interface Science,2019,553:682-687.
APA	B.Sun.,T.Guo.,G.D.Zhou.,S.Ranjan.,W.T.Hou.,...&Y.Zhao.(2019).Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.Journal of Colloid and Interface Science,553,682-687.
MLA	B.Sun,et al."Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour".Journal of Colloid and Interface Science 553(2019):682-687.

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