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Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation
K.Wang; J.S.Gao; H.G.Yang; X.Y.Wang; Y.C.Wang; Z.Zhang
2019
发表期刊Applied Surface Science
ISSN0169-4332
卷号464页码:502-508
摘要We studied the infrared absorption of a top sulfur hyperdoping layer covering an fs-laser irradiated microstructured Si substrate. To clarify the hyperdoping concentration distributions, and to find out how the top hyperdoping layer affects infrared absorption from 1200 to 2000 nm, a continuous etching treatment was utilized. Then we interpreted the thermal stabilization of both infrared absorption and sulfur hyperdoping concentration. The fundamental cause for infrared-absorption degradation under thermal annealing was explained. Furthermore, we discussed in detail how the interaction between the top hyperdoping layer and surface microstructure contributed to the high infrared absorption by a series of theoretical simulations using a finitedifference time-domain method. A strong localization of an incident electromagnetic wave was observed around the top sulfur hyperdoping layer covering microstructured Si, which played a critical role in improving infrared absorption. The results in this paper are especially beneficial to the subsequent fabrication of photoelectric devices and infrared response improvement.
关键词Sulfur hyperdoping,Silicon,Femtosecond laser,Infrared absorption,infrared-absorption,silicon,photodetection,donor,Chemistry,Materials Science,Physics
DOI10.1016/j.apsusc.2018.09.125
收录类别SCI ; EI
语种英语
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63006
专题中国科学院长春光学精密机械与物理研究所
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K.Wang,J.S.Gao,H.G.Yang,et al. Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation[J]. Applied Surface Science,2019,464:502-508.
APA K.Wang,J.S.Gao,H.G.Yang,X.Y.Wang,Y.C.Wang,&Z.Zhang.(2019).Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation.Applied Surface Science,464,502-508.
MLA K.Wang,et al."Study on top sulfur hyperdoping layer covering microstructured Si by fs-laser irradiation".Applied Surface Science 464(2019):502-508.
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