CIOMP OpenIR
Ultraviolet electroluminescence from a n-ZnO filmp-GaN heterojunction under both forward and reverse bias
Ai, Q.; Liu, K. W.; Ma, H. Y.; Yang, J. L.; Chen, X.; Li, B. H.; Shen, D. Z.
2018
发表期刊Journal of Materials Chemistry C
ISSN2050-7526
卷号6期号:42页码:11368-11373
摘要ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs). The devices exhibited strong light emission under both forward and reverse bias. The origin of different luminescence peaks has been investigated by comparing electroluminescence (EL) and photoluminescence spectra. When a forward bias is applied to the device, intense ultraviolet emission at approximate to 376 nm originating from ZnO rather than GaN can be observed, which is associated with the larger hole mobility of p-GaN than the electron mobility of n-ZnO. Under the reverse bias, the device shows broad emission at 520 nm originating from deep level-related recombination in ZnO, emission at 430 nm from GaN, 376 nm from ZnO and weak emission at 408 nm from the interface with a lower injection current of 10 mA. As the injection reverse current increases to 20 mA, the EL emission at 376 nm exhibits a dramatic increase in intensity without a peak shift. The emission mechanism of the heterojunction LED is discussed in terms of interface states and energy band theory. Our findings in this work provide an innovative path for the design and development of ZnO-based ultraviolet diodes.
关键词light-emitting-diodes microwire barriers band Materials Science Physics
DOI10.1039/c8tc04507k
收录类别SCI ; EI
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/61214
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Ai, Q.,Liu, K. W.,Ma, H. Y.,et al. Ultraviolet electroluminescence from a n-ZnO filmp-GaN heterojunction under both forward and reverse bias[J]. Journal of Materials Chemistry C,2018,6(42):11368-11373.
APA Ai, Q..,Liu, K. W..,Ma, H. Y..,Yang, J. L..,Chen, X..,...&Shen, D. Z..(2018).Ultraviolet electroluminescence from a n-ZnO filmp-GaN heterojunction under both forward and reverse bias.Journal of Materials Chemistry C,6(42),11368-11373.
MLA Ai, Q.,et al."Ultraviolet electroluminescence from a n-ZnO filmp-GaN heterojunction under both forward and reverse bias".Journal of Materials Chemistry C 6.42(2018):11368-11373.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Ultraviolet electrol(2735KB)期刊论文出版稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Ai, Q.]的文章
[Liu, K. W.]的文章
[Ma, H. Y.]的文章
百度学术
百度学术中相似的文章
[Ai, Q.]的文章
[Liu, K. W.]的文章
[Ma, H. Y.]的文章
必应学术
必应学术中相似的文章
[Ai, Q.]的文章
[Liu, K. W.]的文章
[Ma, H. Y.]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Ultraviolet electroluminescence from a n-ZnO f.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。