Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method

doi:10.1364/ao.57.0000f1

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	Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method
	Shen, C.; Tan, X.; Jiao, Q. B.; Zhang, W.; Wang, T. T.; Li, W. H.; Wu, N.; Qi, X. D.; Bayan, H.
	2018
发表期刊	Applied Optics
ISSN	1559-128X
卷号	57 期号:34 页码:F1-F7
摘要	The influence of the removal depth of a silicon modification layer on grating structures and mirrors is studied. The removal depth 6-14 mu m is the optimization result for Si-modified reaction-sintered silicon carbide (RS-SiC) used as mirror substrates, but the removal depth 9-12 mu m is the optimization result for Si-modified RS-SiC used as grating substrates. The diffraction efficiency and stray light of the gratings fabricated in the Si-modified RS-SiC substrates with removal depth 9-12 mu m is 90.5%-94% and 5.30 x 10(-7)-5.45 x 10(-7), respectively. Additionally, the number and scale of high-reflection points can be used as the basis for judging the removal depth of the Si-modified RS-SiC used as grating substrates. These results and the regularity have guiding significance for the application of Si-modified RS-SiC as a microstructural substrate. (C) 2018 Optical Society of America
关键词	thermal-oxidation Optics
DOI	10.1364/ao.57.0000f1
收录类别	SCI ; EI
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61163
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Shen, C.,Tan, X.,Jiao, Q. B.,et al. Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method[J]. Applied Optics,2018,57(34):F1-F7.
APA	Shen, C..,Tan, X..,Jiao, Q. B..,Zhang, W..,Wang, T. T..,...&Bayan, H..(2018).Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method.Applied Optics,57(34),F1-F7.
MLA	Shen, C.,et al."Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method".Applied Optics 57.34(2018):F1-F7.

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