Reinventing a p-type doping process for stable ZnO light emitting devices

doi:10.1088/1361-6463/aabe49

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	Reinventing a p-type doping process for stable ZnO light emitting devices
	Xie, X. H.; Li, B. H.; Zhang, Z. Z.; Shen, D. Z.
	2018
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	51 期号:22 页码:4
摘要	A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable ptype conductivity. Selfcompensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2 x 2) + Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V-O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration similar to 1 x 10(19) cm(-3), is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V-O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.
关键词	zinc oxide p-type self-compens-tion doping molecular-beam epitaxy thin-films room-temperature mgzno films diodes nanoparticles modulation gan(0001) inversion epilayers Physics
DOI	10.1088/1361-6463/aabe49
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61127
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,et al. Reinventing a p-type doping process for stable ZnO light emitting devices[J]. Journal of Physics D-Applied Physics,2018,51(22):4.
APA	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,&Shen, D. Z..(2018).Reinventing a p-type doping process for stable ZnO light emitting devices.Journal of Physics D-Applied Physics,51(22),4.
MLA	Xie, X. H.,et al."Reinventing a p-type doping process for stable ZnO light emitting devices".Journal of Physics D-Applied Physics 51.22(2018):4.

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