Refined grating fabrication using Displacement Talbot Lithography

doi:10.1016/j.mee.2017.12.018

CIOMP OpenIR

	Refined grating fabrication using Displacement Talbot Lithography
	Chen, H.; Qin, L.; Chen, Y. Y.; Jia, P.; Gao, F.; Chen, C.; Liang, L.; Zhang, X.; Lou, H. W.; Ning, Y. Q.; Wang, L. J.
	2018
发表期刊	Microelectronic Engineering
ISSN	0167-9317
卷号	189 页码:74-77
摘要	High-resolution grating areas with none stitching error are in demanding needs but usually expensive and hard to prepare. In this paper, we present a method of making refined grating areas from coarse photolithography mask using Displacement Talbot Lithography (DTL). DTL is relatively simple and low-cost system based on mask photolithography for high-resolution periodic structures over large areas. The grating periods on the ordinary coarse photolithography mask was designed as 3.552 pm. By patterning gratings on Si3N4 film deposited on fused silica as intervening phase masks, the final prepared grating periods shrinks 8 times, down to 444 nm. This technology is suitable for producing large area high resolution gratings to reduce the research cost, and, can be applied to applications such as DFB laser production, LED substrates preparation and other relative fields. (C) 2017 Elsevier B.V. All rights reserved.
关键词	Refined grating fabrication Displacement Talbot Lithography Phase shift mask Photolighography interferometric lithography grids Engineering Science & Technology - Other Topics Optics Physics
DOI	10.1016/j.mee.2017.12.018
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61124
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Chen, H.,Qin, L.,Chen, Y. Y.,et al. Refined grating fabrication using Displacement Talbot Lithography[J]. Microelectronic Engineering,2018,189:74-77.
APA	Chen, H..,Qin, L..,Chen, Y. Y..,Jia, P..,Gao, F..,...&Wang, L. J..(2018).Refined grating fabrication using Displacement Talbot Lithography.Microelectronic Engineering,189,74-77.
MLA	Chen, H.,et al."Refined grating fabrication using Displacement Talbot Lithography".Microelectronic Engineering 189(2018):74-77.

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