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Performance investigation of 120 Gbs all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme
Kotb, A.; Zoiros, K. E.; Guo, C. L.
2018
发表期刊Journal of Computational Electronics
ISSN1569-8025
卷号17期号:4页码:1640-1649
摘要Reflective semiconductor optical amplifiers (RSOAs) use an anti-reflective coating on the front facet and a high reflectivity coating on the rear facet to produce a higher gain than conventional SOAs. In this paper, this potential is exploited to numerically investigate the ultrafast performance of an all-optical logic XOR gate implemented using a dual-RSOA-based scheme at a data rate of 120 Gb/s. The simulation results demonstrate that the XOR gate is capable of operating at 120 Gb/s with better performance than when using conventional SOAs.
关键词All-optical XOR gate Reflective semiconductor optical amplifier Quality factor mach-zehnder interferometer nonlinear response phase-modulation speed pulses Engineering Physics
DOI10.1007/s10825-018-1243-4
收录类别SCI ; EI
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/61104
专题中国科学院长春光学精密机械与物理研究所
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Kotb, A.,Zoiros, K. E.,Guo, C. L.. Performance investigation of 120 Gbs all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme[J]. Journal of Computational Electronics,2018,17(4):1640-1649.
APA Kotb, A.,Zoiros, K. E.,&Guo, C. L..(2018).Performance investigation of 120 Gbs all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme.Journal of Computational Electronics,17(4),1640-1649.
MLA Kotb, A.,et al."Performance investigation of 120 Gbs all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme".Journal of Computational Electronics 17.4(2018):1640-1649.
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