Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation

doi:10.1039/c8nr06311g

CIOMP OpenIR

	Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation
	Song, L.; Guo, X. Y.; Hu, Y. S.; Lv, Y.; Lin, J.; Fan, Y.; Zhang, N.; Liu, X. Y.
	2018
发表期刊	Nanoscale
ISSN	2040-3364
卷号	10 期号:38 页码:18315-18322
摘要	Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67300 cd m(-2), current efficiency of 22.5 cd A(-1) and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.
关键词	hybrid perovskite inorganic perovskites quantum dots diodes efficient voltage films Chemistry Science & Technology - Other Topics Materials Science Physics
DOI	10.1039/c8nr06311g
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61029
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Song, L.,Guo, X. Y.,Hu, Y. S.,et al. Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation[J]. Nanoscale,2018,10(38):18315-18322.
APA	Song, L..,Guo, X. Y..,Hu, Y. S..,Lv, Y..,Lin, J..,...&Liu, X. Y..(2018).Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation.Nanoscale,10(38),18315-18322.
MLA	Song, L.,et al."Improved performance of CsPbBr3 perovskite light-emitting devices by both boundary and interface defects passivation".Nanoscale 10.38(2018):18315-18322.

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