Eradicated unintentional incorporated donor-type impurities of ZnO

doi:10.1063/1.5022998

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	Eradicated unintentional incorporated donor-type impurities of ZnO
	Xie, X. H.; Li, B. H.; Zhang, Z. Z.; Shen, D. Z.
	2018
发表期刊	Aip Advances
ISSN	2158-3226
卷号	8 期号:3 页码:5
摘要	Impurity control is essential for semiconductor doping. Through the systematic analysis of pollution sources, we determined that the residual electrons of as-grown unintentional doped zinc oxide (ZnO) films were derived from the unintentional incorporation of silicon, which grown by molecular beam epitaxy. At the same time, it was determined that unforeseen donor-type impurities (boron, carbon, chlorine and fluorine) were introduced during the nitrogen doping process. By subjecting the sources of the contamination to a surface passivation process, these donor-type impurities are controlled at a tolerable level. The residual electrons concentration of the unintentional doped ZnO film was lowered to 1 X 10(15) cm(-3), and the mobility was 155 cm(2)/ V center dot s. Nitrogen-doped ZnO films exhibited p-type conductivity, with a hole concentration of 2 X 10(16) cm(-3) and a mobility of 10 cm(2)/ V center dot s. Our results provide a pure foundation for further research on p-type doping of ZnO. (c) 2018 Author(s).
关键词	Science & Technology - Other Topics Materials Science Physics
DOI	10.1063/1.5022998
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60979
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,et al. Eradicated unintentional incorporated donor-type impurities of ZnO[J]. Aip Advances,2018,8(3):5.
APA	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,&Shen, D. Z..(2018).Eradicated unintentional incorporated donor-type impurities of ZnO.Aip Advances,8(3),5.
MLA	Xie, X. H.,et al."Eradicated unintentional incorporated donor-type impurities of ZnO".Aip Advances 8.3(2018):5.

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