Behavior of indium alloying with Cu2ZnSn(S,Se)(4) and its effect on performances of Cu2ZnSn(S,Se)(4)-based solar cell

doi:10.1016/j.jallcom.2018.07.129

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	Behavior of indium alloying with Cu2ZnSn(S,Se)(4) and its effect on performances of Cu2ZnSn(S,Se)(4)-based solar cell
	Xiao, Z. Y.; Luan, H. M.; Liu, R. J.; Yao, B.; Li, Y. F.; Ding, Z. H.; Yang, G.; Deng, R.; Wang, G.; Zhang, Z. Z.; Zhang, L. G.; Zhao, H. F.
	2018
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	767 页码:439-447
摘要	P-type solid solutions of indium (In) in kesterite Cu2ZnSn(S,Se)(4) films (CZTSSe(In)) with In contents of 0 -19.34 at% were prepared by In alloying with the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) through a solution approach. It is found that the In substitutes for Sn to form Ins,, acceptor defect in the CZTSSe(In) in the In content range of 0-1.15 at%, and for Cu and Sn to form In-Cu-In-Sn donor complex or/and for a small number of Zn to form In-Zn donor defects in the range of 6.34-19.34 at%. The hole concentration of the CZTSSe(In) increases with increasing In content in the range of 0-1.15 at%, but decreases in the range of 6.34-19.34 at%. The bandgap of the CZTSSe(In) increases from 1.040 eV for CZTSSe to 1.083 eV for CZTSSe(In) with 19.34 at% In. Three solar cells with traditional structure and power conversion efficiency (PCE) of 3.52, 3.24 and 1.67% were fabricated by using the CZTSSe and CZTSSe(In) with In content of 0.67 and 12.27 at% as absorbers, respectively. It is found that the effect of the bandgap on the open-circuit voltage (V-oc) is little compared to the hole concentration. The increased hole concentration enhances the V-oc, but decreases the photogenerated current density (J(ph)) and reverse saturation current density (J(0)). The effect of In alloying on the PCE of the CZTSSe(In)-based solar cell is determined by the effects of the hole concentration on V-oc, Jph and J(0). The influence mechanism of the In alloying on the properties of the CZTSSe and performance of the CZTSSe-based solar cell are discussed in the present work. 2018 Elsevier B.V. All rights reserved.
关键词	Cu2ZnSn(S, Se)(4) Solar cell Indium alloying Power conversion efficiency thin-film formation mechanism precursors growth nanoparticles route layer ag Chemistry Materials Science Metallurgy & Metallurgical Engineering
DOI	10.1016/j.jallcom.2018.07.129
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60916
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xiao, Z. Y.,Luan, H. M.,Liu, R. J.,et al. Behavior of indium alloying with Cu2ZnSn(S,Se)(4) and its effect on performances of Cu2ZnSn(S,Se)(4)-based solar cell[J]. Journal of Alloys and Compounds,2018,767:439-447.
APA	Xiao, Z. Y..,Luan, H. M..,Liu, R. J..,Yao, B..,Li, Y. F..,...&Zhao, H. F..(2018).Behavior of indium alloying with Cu2ZnSn(S,Se)(4) and its effect on performances of Cu2ZnSn(S,Se)(4)-based solar cell.Journal of Alloys and Compounds,767,439-447.
MLA	Xiao, Z. Y.,et al."Behavior of indium alloying with Cu2ZnSn(S,Se)(4) and its effect on performances of Cu2ZnSn(S,Se)(4)-based solar cell".Journal of Alloys and Compounds 767(2018):439-447.

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