CIOMP OpenIR
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device
Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H.; Miao, G. Q.; Song, H.
2018
发表期刊Journal of Alloys and Compounds
ISSN0925-8388
卷号740页码:816-822
摘要In this paper, the effect of annealing on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN metal-insulator-semiconductor (MIS) structure memristor is demonstrated. The results show that the stability and repeatability of the bipolar resistive switching are greatly improved in annealed Ti/Si3N4/n-GaN MIS devices. The mechanism involved is revealed by both conductive force microscopy (CFM) and x-ray photoelectron spectroscopy (XPS). It is confirmed to in-situ local Ti doping in Si3N4 by thermal annealing and can be ascribed to the local Ti dopants in the Si3N4 bonding the N atoms at positive bias by electro-reductive process that benefits to form stable nanoscale Si filaments. On the contrary, the Si filaments rupture by recombining with N atoms near the n-GaN side at negative bias. The proposed device is apt to integrate with a GaN-based high electron mobility transistor (HEMT) to structure a one-transistor-one-resistor (1T1R) nonvolatile memory cell, which is expected to develop the application of the nitride semiconductors in data storage in addition to the applications in light-emitting diodes, laser diodes, power devices, and photodetectors. (C) 2018 Elsevier B.V. All rights reserved.
关键词Data storage materials Resistive switching Metal-insulator-semiconductor Annealing effect Nonvolatile memory nonvolatile memory behaviors mechanism breakdown layer power ti Chemistry Materials Science Metallurgy & Metallurgical Engineering
DOI10.1016/j.jallcom.2018.01.072
收录类别SCI ; EI
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/60912
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
Chen, Y. R.,Li, Z. M.,Zhang, Z. W.,et al. Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device[J]. Journal of Alloys and Compounds,2018,740:816-822.
APA Chen, Y. R..,Li, Z. M..,Zhang, Z. W..,Hu, L. Q..,Jiang, H..,...&Song, H..(2018).Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device.Journal of Alloys and Compounds,740,816-822.
MLA Chen, Y. R.,et al."Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device".Journal of Alloys and Compounds 740(2018):816-822.
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Annealing effect on (1681KB)期刊论文出版稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Chen, Y. R.]的文章
[Li, Z. M.]的文章
[Zhang, Z. W.]的文章
百度学术
百度学术中相似的文章
[Chen, Y. R.]的文章
[Li, Z. M.]的文章
[Zhang, Z. W.]的文章
必应学术
必应学术中相似的文章
[Chen, Y. R.]的文章
[Li, Z. M.]的文章
[Zhang, Z. W.]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Annealing effect on the bipolar resistive swit.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。