Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3

doi:10.1039/c8ra00523k

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	Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3
	Yang, C.; Liang, H. W.; Zhang, Z. Z.; Xia, X. C.; Tao, P. C.; Chen, Y. P.; Zhang, H. Q.; Shen, R. S.; Luo, Y. M.; Du, G. T.
	2018
发表期刊	Rsc Advances
ISSN	2046-2069
卷号	8 期号:12 页码:6341-6345
摘要	A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal beta-Ga2O3. Cu and Ti/Au were deposited on the top and bottom surface of Ga2O3 as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 x 10(7) at +/- 2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.
关键词	semiconductor ultraviolet photodetectors heterojunction film wavelength detectors nanowires Chemistry
DOI	10.1039/c8ra00523k
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60804
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Yang, C.,Liang, H. W.,Zhang, Z. Z.,et al. Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3[J]. Rsc Advances,2018,8(12):6341-6345.
APA	Yang, C..,Liang, H. W..,Zhang, Z. Z..,Xia, X. C..,Tao, P. C..,...&Du, G. T..(2018).Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3.Rsc Advances,8(12),6341-6345.
MLA	Yang, C.,et al."Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3".Rsc Advances 8.12(2018):6341-6345.

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