Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

doi:10.1021/acsphotonics.7b01215

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	Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
	Feng, M. X.; Li, Z. C.; Wang, J.; Zhou, R.; Sun, Q.; Sun, X. J.; Li, D. B.; Gao, H. W.; Zhou, Y.; Zhang, S. M.; Li, D. Y.; Zhang, L. Q.; Liu, J. P.; Wang, H. B.; Ikeda, M.; Zheng, X. H.; Yang, H.
	2018
发表期刊	Acs Photonics
ISSN	2330-4022
卷号	5 期号:3 页码:699-704
摘要	This letter reports a successful fabrication of room-temperature electrically injected AlGaN-based near ultraviolet laser diode grown on Si. An Al-composition step down-graded AlN/AlGaN multilayer buffer was carefully engineered to not only tackle the huge difference in the coefficient of thermal expansion between AlGaN template and Si substrate, but also reduce the threading dislocation density caused by the large lattice mismatch. On top of the crack-free n-AlGaN template, high quality InGaN/AlGaN quantum wells were grown, sandwiched by waveguide and optical cladding layers, for the fabrication of edge-emitting laser diode. A dramatic narrowing of the electroluminescence spectral line width, an elongated far-field pattern, and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing.
关键词	AlGaN near-ultraviolet laser Si substrate stress defect light-emitting-diodes gan efficiency Science & Technology - Other Topics Materials Science Optics Physics
DOI	10.1021/acsphotonics.7b01215
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60797
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Feng, M. X.,Li, Z. C.,Wang, J.,et al. Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si[J]. Acs Photonics,2018,5(3):699-704.
APA	Feng, M. X..,Li, Z. C..,Wang, J..,Zhou, R..,Sun, Q..,...&Yang, H..(2018).Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si.Acs Photonics,5(3),699-704.
MLA	Feng, M. X.,et al."Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si".Acs Photonics 5.3(2018):699-704.

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