Overwhelming coexistence of negative differential resistance effect and RRAM

doi:10.1039/c8cp03492c

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	Overwhelming coexistence of negative differential resistance effect and RRAM
	Guo, T.; Sun, B.; Zhou, Y.; Zhao, H. B.; Lei, M.; Zhao, Y.
	2018
发表期刊	Physical Chemistry Chemical Physics
ISSN	1463-9076
卷号	20 期号:31 页码:20635-20640
摘要	An electronic cell that possesses synchronously multi-physical properties is of great importance in the applications of multifunctional electronic devices. In this study, an overwhelming coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior at room temperature was observed based on Ag/Cu2ZnSnSe4 (CZTSe)/Mo devices. The long retention time of approximate to 10(4) s and high HRS/LRS resistance ratio of approximate to 215 can be achieved, indicating that our devices possess excellent resistance random access memory (RRAM). Moreover, strong NDR behavior was observed at room temperature, which provides a great potential application in advanced electronic devices. Finally, the combined physical model of conductive filament and Schottky barrier reinstallment is demonstrated to explain the coexistence phenomenon. Thus, in this, study we propose a new strategy for preparing a multifunctional electronic device with multiple physical attributes in the future.
关键词	resistive switching memories film nanoparticles mechanisms filaments devices Chemistry Physics
DOI	10.1039/c8cp03492c
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60760
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Guo, T.,Sun, B.,Zhou, Y.,et al. Overwhelming coexistence of negative differential resistance effect and RRAM[J]. Physical Chemistry Chemical Physics,2018,20(31):20635-20640.
APA	Guo, T.,Sun, B.,Zhou, Y.,Zhao, H. B.,Lei, M.,&Zhao, Y..(2018).Overwhelming coexistence of negative differential resistance effect and RRAM.Physical Chemistry Chemical Physics,20(31),20635-20640.
MLA	Guo, T.,et al."Overwhelming coexistence of negative differential resistance effect and RRAM".Physical Chemistry Chemical Physics 20.31(2018):20635-20640.

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