Controlled compensation via non-equilibrium electrons in ZnO

doi:10.1038/s41598-018-35178-w

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	Controlled compensation via non-equilibrium electrons in ZnO
	Xie, X. H.; Li, B. H.; Zhang, Z. Z.; Wang, S. P.; Shen, D. Z.
	2018
发表期刊	Scientific Reports
ISSN	2045-2322
卷号	8 页码:7
摘要	Doping wide-band-gap semiconductor with impurities always accompanied spontaneous compensation of opposite charged intrinsic defects, which lead to invalid control of the type of free carriers. We demonstrate an effectual route to overcoming such detrimental defects formation during doping by suppressing Fermi level shifting using non-equilibrium carriers gathering on the polar epitaxial surfaces. Non-equilibrium carriers are generated by ultraviolet light excited interband transitions (photon energy greater than bandgap). Because the p-type dopants are compensated by non-equilibrium electrons at metal-polar surfaces, donor-type native defects are inhibited. This new doping strategy provides an attractive solution to self-compensation problems in wide-band-gap semiconductors with spontaneous polarization of the future.
关键词	light-emitting-diodes growth emission polarity films Science & Technology - Other Topics
DOI	10.1038/s41598-018-35178-w
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60597
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,et al. Controlled compensation via non-equilibrium electrons in ZnO[J]. Scientific Reports,2018,8:7.
APA	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,Wang, S. P.,&Shen, D. Z..(2018).Controlled compensation via non-equilibrium electrons in ZnO.Scientific Reports,8,7.
MLA	Xie, X. H.,et al."Controlled compensation via non-equilibrium electrons in ZnO".Scientific Reports 8(2018):7.

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