Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias

doi:10.1039/c8tc04507k

CIOMP OpenIR

	Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias
	Ai, Qiu 1,2; Liu, Kewei1 ; Ma, Hongyu 1,2; Yang, Jialin 1,2; Chen, Xing1 ; Li, Binghui1 ; Shen, Dezhen1
	2018-11-14
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C
ISSN	2050-7526
卷号	6 期号:42 页码:11368-11373
通讯作者	Liu, Kewei(liukw@ciomp.ac.cn) ; Shen, Dezhen(shendz@ciomp.ac.cn)
摘要	ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs). The devices exhibited strong light emission under both forward and reverse bias. The origin of different luminescence peaks has been investigated by comparing electroluminescence (EL) and photoluminescence spectra. When a forward bias is applied to the device, intense ultraviolet emission at approximate to 376 nm originating from ZnO rather than GaN can be observed, which is associated with the larger hole mobility of p-GaN than the electron mobility of n-ZnO. Under the reverse bias, the device shows broad emission at 520 nm originating from deep level-related recombination in ZnO, emission at 430 nm from GaN, 376 nm from ZnO and weak emission at 408 nm from the interface with a lower injection current of 10 mA. As the injection reverse current increases to 20 mA, the EL emission at 376 nm exhibits a dramatic increase in intensity without a peak shift. The emission mechanism of the heterojunction LED is discussed in terms of interface states and energy band theory. Our findings in this work provide an innovative path for the design and development of ZnO-based ultraviolet diodes.
DOI	10.1039/c8tc04507k
关键词[WOS]	LIGHT-EMITTING-DIODES ; MICROWIRE ; BARRIERS ; BAND
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61475153] ; National Natural Science Foundation of China[61605200] ; National Natural Science Foundation of China[11727902] ; National Natural Science Foundation of China[61425021] ; National Natural Science Foundation of China[61525404] ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project[20180519023JH] ; National Natural Science Foundation of China[61475153] ; National Natural Science Foundation of China[61605200] ; National Natural Science Foundation of China[11727902] ; National Natural Science Foundation of China[61425021] ; National Natural Science Foundation of China[61525404] ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project[20180519023JH] ; National Natural Science Foundation of China[61475153] ; National Natural Science Foundation of China[61605200] ; National Natural Science Foundation of China[11727902] ; National Natural Science Foundation of China[61425021] ; National Natural Science Foundation of China[61525404] ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project[20180519023JH] ; National Natural Science Foundation of China[61475153] ; National Natural Science Foundation of China[61605200] ; National Natural Science Foundation of China[11727902] ; National Natural Science Foundation of China[61425021] ; National Natural Science Foundation of China[61525404] ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project[20180519023JH]
项目资助者	National Natural Science Foundation of China ; Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000449698600018
出版者	ROYAL SOC CHEMISTRY
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60319
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Liu, Kewei; Shen, Dezhen
作者单位	1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Ai, Qiu,Liu, Kewei,Ma, Hongyu,et al. Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(42):11368-11373.
APA	Ai, Qiu.,Liu, Kewei.,Ma, Hongyu.,Yang, Jialin.,Chen, Xing.,...&Shen, Dezhen.(2018).Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias.JOURNAL OF MATERIALS CHEMISTRY C,6(42),11368-11373.
MLA	Ai, Qiu,et al."Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias".JOURNAL OF MATERIALS CHEMISTRY C 6.42(2018):11368-11373.