2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices

doi:10.1002/adma.201802207

CIOMP OpenIR

	2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices
	Zhang, Jia Lin 1; Han, Cheng 2,3; Hu, Zehua 3; Wang, Li4,5 ; Liu, Lei6 ; Wee, Andrew T. S.3; Chen, Wei1,2,3,7
	2018-11-22
Source Publication	ADVANCED MATERIALS
ISSN	0935-9648
Volume	30 Issue:47 Pages:11
Corresponding Author	Chen, Wei(phycw@nus.edu.sg)
Abstract	Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.
Keyword	2D phosphorene electronic devices epitaxial growth interface engineering
DOI	10.1002/adma.201802207
WOS Keyword	LAYER BLACK PHOSPHORUS ; FIELD-EFFECT TRANSISTORS ; 2-DIMENSIONAL MATERIALS ; TRANSPORT-PROPERTIES ; BAND-GAP ; SURFACE FUNCTIONALIZATION ; AMBIENT DEGRADATION ; QUANTUM CONFINEMENT ; CARRIER MOBILITY ; BLUE PHOSPHORUS
Indexed By	SCI
Language	英语
Funding Project	NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005]
Funding Organization	NSFC ; Natural Science Foundation of Jiangsu Province ; National Science Fund for Distinguished Young Scholars of China ; Singapore MOE Grant ; Fundamental Research Foundation of Shenzhen ; Shenzhen Peacock Plan ; Science and Technology Planning Project of Guangdong Province
WOS Research Area	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS ID	WOS:000450371900013
Publisher	WILEY-V C H VERLAG GMBH
Citation statistics
Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/60303
Collection	中国科学院长春光学精密机械与物理研究所
Corresponding Author	Chen, Wei
Affiliation	1.Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore 2.Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China 3.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore 4.Nanchang Univ, Inst Adv Study, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China 5.Nanchang Univ, Dept Phys, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China 6.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Jilin, Peoples R China 7.Natl Univ Singapore, Suzhou Res Inst, 377 Lin Quan St, Suzhou Industrial Pk 215123, Jiangsu, Peoples R China
Recommended Citation GB/T 7714	Zhang, Jia Lin,Han, Cheng,Hu, Zehua,et al. 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices[J]. ADVANCED MATERIALS,2018,30(47):11.
APA	Zhang, Jia Lin.,Han, Cheng.,Hu, Zehua.,Wang, Li.,Liu, Lei.,...&Chen, Wei.(2018).2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices.ADVANCED MATERIALS,30(47),11.
MLA	Zhang, Jia Lin,et al."2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices".ADVANCED MATERIALS 30.47(2018):11.

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中国科学院长春光学精密机械与物理研究所