Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy | |
Kai, CuiHong1,2; Sun, XiaoJuan1 ; Jia, YuPing1; Shi, ZhiMing1; Jiang, Ke1,2; Ben, JianWei1,2; Wu, You1,2; Wang, Yong1,2; Liu, HeNan1; Li, XiaoHang3; Li, DaBing1
| |
| 2019-06-01 | |
| Source Publication | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| ISSN | 1674-7348 |
| Volume | 62Issue:6Pages:6 |
| Corresponding Author | Sun, XiaoJuan(sunxj@ciomp.ac.cn) ; Li, DaBing(lidb@ciomp.ac.cn) |
| Abstract | Surface potentials in the vicinity of V-pits (cone bottom) and U-pits (blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet (UV) light-assisted Kelvin probe force microscopy (KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V- and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit (30n(0)) and Upit (15n(0)) are higher than that at planar surface (n(0)). Under UV light, for V-pit, the electron concentration at the cone bottom (4.93x10(11)n(0)) is lower than that at the surrounding planar surface (5.68x10(13)n(0)). For U-pit, the electron concentration at the blunt bottom is 1.35x10(12)n(0), which is lower than that at the surrounding planar surface (6.13x10(13)n(0)). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface. |
| Keyword | pit defects surface potential electron concentration |
| DOI | 10.1007/s11433-018-9320-x |
| WOS Keyword | MULTIPLE-QUANTUM WELLS ; V-PIT ; GROWTH ; EFFICIENCY ; EMISSION |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Key R&D Program of China[2016YFB0400101] ; National Science Fund for Distinguished Young Scholars[61725403] ; National Natural Science Foundation of China[61574142] ; National Natural Science Foundation of China[61322406] ; National Natural Science Foundation of China[61704171] ; National Natural Science Foundation of China[11705206] ; National Natural Science Foundation of China[61774065] ; Key Program of the International Partnership Program of Chinese Academy of Sciences[181722KYSB20160015] ; Special Project for Inter-government Collaboration of the State Key Research and Development Program[2016YFE0118400] ; Science and Technology Service Network Initiative of the Chinese Academy of Sciences ; Jilin Provincial Science & Technology Department[20180201026GX] ; CAS Interdisciplinary Innovation Team ; Youth Innovation Promotion Association of Chinese Academy of Sciences[2015171] ; King Abdullah University of Science and Technology (KAUST) Baseline[BAS/1/1664-01-01] ; Gulf Cooperation Council (GCC) Research Council[REP/1/3189-01-01] ; [URF/1/3437-01-01] |
| Funding Organization | National Key R&D Program of China ; National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China ; Key Program of the International Partnership Program of Chinese Academy of Sciences ; Special Project for Inter-government Collaboration of the State Key Research and Development Program ; Science and Technology Service Network Initiative of the Chinese Academy of Sciences ; Jilin Provincial Science & Technology Department ; CAS Interdisciplinary Innovation Team ; Youth Innovation Promotion Association of Chinese Academy of Sciences ; King Abdullah University of Science and Technology (KAUST) Baseline ; Gulf Cooperation Council (GCC) Research Council |
| WOS Research Area | Physics |
| WOS Subject | Physics, Multidisciplinary |
| WOS ID | WOS:000454916100001 |
| Publisher | SCIENCE PRESS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ciomp.ac.cn/handle/181722/60126 |
| Collection | 中国科学院长春光学精密机械与物理研究所 |
| Corresponding Author | Sun, XiaoJuan; Li, DaBing |
| Affiliation | 1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.KAUST, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia |
| Recommended Citation GB/T 7714 | Kai, CuiHong,Sun, XiaoJuan,Jia, YuPing,et al. Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2019,62(6):6. |
| APA | Kai, CuiHong.,Sun, XiaoJuan.,Jia, YuPing.,Shi, ZhiMing.,Jiang, Ke.,...&Li, DaBing.(2019).Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,62(6),6. |
| MLA | Kai, CuiHong,et al."Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 62.6(2019):6. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment