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InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance
Yu, Qingnan1; Li, Xue2; Jia, Yan1; Lu, Wei1; Zheng, Ming1; Zhang, Xing2; Ning, Yongqiang2; Wu, Jian1
2018-12-01
Source PublicationACS PHOTONICS
ISSN2330-4022
Volume5Issue:12Pages:4896-4902
Corresponding AuthorWu, Jian(jwu2@buaa.edu.cn)
AbstractIn the development of semiconductor lasers, it has been a dream all along to simultaneously obtain extremely wide and uniform gain distribution, because such a gain configuration can greatly enhance semiconductor laser performance. Hence, it has also been a huge challenge to realize this dream so far. In this paper, we are reporting a special InGaAs-based well island composite quantum-confined structure, with which the best results to date in achieving both superwide and very uniform gain and power distributions are obtained. The spectral flatness of the output power can reach 0.1 dB, and the gain bandwidth is broadened to 6-fold broader than the fwhm (full width at half-maximum) of the standard gain spectrum from a classic InGaAs quantum well under the same carrier density. The formation of the well-island composite quantum-confined structure is associated with the indium-rich island effect in the material growth. The great significance of this work lies in that it is making the above dream come true, since it not only can tremendously increase the spectral tuning range of an InGaAs-based semiconductor laser but also exhibits a great potential on achieving uniform output power over the full spectral tuning range of the laser.
Keywordtunable semiconductor lasers well-island composite quantum-confined structure In GaAs/GaAs material gain characteristics flat top indium-rich islands
DOI10.1021/acsphotonics.8b01048
WOS KeywordEXTERNAL-CAVITY ; LIGHT ; GROWTH ; DIODE ; SI
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[61376067] ; National Natural Science Foundation of China[61474118]
Funding OrganizationNational Natural Science Foundation of China
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Optics ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000454463000024
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/60108
Collection中国科学院长春光学精密机械与物理研究所
Corresponding AuthorWu, Jian
Affiliation1.Beihang Univ, Dept Appl Phys, Beijing 100191, Peoples R China
2.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China
Recommended Citation
GB/T 7714
Yu, Qingnan,Li, Xue,Jia, Yan,et al. InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance[J]. ACS PHOTONICS,2018,5(12):4896-4902.
APA Yu, Qingnan.,Li, Xue.,Jia, Yan.,Lu, Wei.,Zheng, Ming.,...&Wu, Jian.(2018).InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance.ACS PHOTONICS,5(12),4896-4902.
MLA Yu, Qingnan,et al."InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance".ACS PHOTONICS 5.12(2018):4896-4902.
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