Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance | |
Yu, Qingnan1; Li, Xue2; Jia, Yan1; Lu, Wei1; Zheng, Ming1; Zhang, Xing2 ; Ning, Yongqiang2; Wu, Jian1
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| 2018-12-01 | |
| Source Publication | ACS PHOTONICS
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| ISSN | 2330-4022 |
| Volume | 5Issue:12Pages:4896-4902 |
| Corresponding Author | Wu, Jian(jwu2@buaa.edu.cn) |
| Abstract | In the development of semiconductor lasers, it has been a dream all along to simultaneously obtain extremely wide and uniform gain distribution, because such a gain configuration can greatly enhance semiconductor laser performance. Hence, it has also been a huge challenge to realize this dream so far. In this paper, we are reporting a special InGaAs-based well island composite quantum-confined structure, with which the best results to date in achieving both superwide and very uniform gain and power distributions are obtained. The spectral flatness of the output power can reach 0.1 dB, and the gain bandwidth is broadened to 6-fold broader than the fwhm (full width at half-maximum) of the standard gain spectrum from a classic InGaAs quantum well under the same carrier density. The formation of the well-island composite quantum-confined structure is associated with the indium-rich island effect in the material growth. The great significance of this work lies in that it is making the above dream come true, since it not only can tremendously increase the spectral tuning range of an InGaAs-based semiconductor laser but also exhibits a great potential on achieving uniform output power over the full spectral tuning range of the laser. |
| Keyword | tunable semiconductor lasers well-island composite quantum-confined structure In GaAs/GaAs material gain characteristics flat top indium-rich islands |
| DOI | 10.1021/acsphotonics.8b01048 |
| WOS Keyword | EXTERNAL-CAVITY ; LIGHT ; GROWTH ; DIODE ; SI |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[61376067] ; National Natural Science Foundation of China[61474118] |
| Funding Organization | National Natural Science Foundation of China |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Optics ; Physics |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000454463000024 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ciomp.ac.cn/handle/181722/60108 |
| Collection | 中国科学院长春光学精密机械与物理研究所 |
| Corresponding Author | Wu, Jian |
| Affiliation | 1.Beihang Univ, Dept Appl Phys, Beijing 100191, Peoples R China 2.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China |
| Recommended Citation GB/T 7714 | Yu, Qingnan,Li, Xue,Jia, Yan,et al. InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance[J]. ACS PHOTONICS,2018,5(12):4896-4902. |
| APA | Yu, Qingnan.,Li, Xue.,Jia, Yan.,Lu, Wei.,Zheng, Ming.,...&Wu, Jian.(2018).InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance.ACS PHOTONICS,5(12),4896-4902. |
| MLA | Yu, Qingnan,et al."InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance".ACS PHOTONICS 5.12(2018):4896-4902. |
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| InGaAs-Based Well-Is（591KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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