High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties

	High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties
	Zhang, Z. W.; G. Q. Miao; H. Song; D. B. Li; H. Jiang; Z. M. Li; Y. R. Chen and X. J. Sun
	2017
发表期刊	Applied Physics a-Materials Science & Processing
卷号	123 期号:4
摘要	The design of novel structural material is an effective way to improve photodetection device performance. In this paper, the fabrication and performance of high In content InGaAs detectors were investigated. Using the two-step growth method, mismatch defect was effectively inhibited even with larger lattice mismatch at the interface. Meanwhile, the spectral response can cover the entire near-infrared region at room temperature. Through experiments and simulation, the optoelectronic properties of detector with different materials in the p-region are explored, elucidating the critical role of cap material in the transport properties of carriers. Compared to the typical InP cap detector, the InAsP cap detector shows better device performance. Also the dark current mechanism is analyzed on the basis of bias-temperature relation, and the result shows that the tunneling current plays a key role at high bias or low temperature. The introduction of a novel InGaAs detector provides a potential application to the development of near-infrared detection.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59467
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang, Z. W.,G. Q. Miao,H. Song,et al. High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties[J]. Applied Physics a-Materials Science & Processing,2017,123(4).
APA	Zhang, Z. W..,G. Q. Miao.,H. Song.,D. B. Li.,H. Jiang.,...&Y. R. Chen and X. J. Sun.(2017).High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties.Applied Physics a-Materials Science & Processing,123(4).
MLA	Zhang, Z. W.,et al."High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties".Applied Physics a-Materials Science & Processing 123.4(2017).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
High in content InGa（2066KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载