CIOMP OpenIR  > 中科院长春光机所知识产出
Key technology progress of optomechanical systems in 193 nm projection objective
Zhang, D.; X. Li; D. Rui; P. Li; L. Dong and J. Zhang
2017
Source PublicationZhongguo Kexue Jishu Kexue/Scientia Sinica Technologica
Volume47Issue:6
AbstractCombined with double/multiple exposure 193 nm immersion lithography will be the main method of industrial production of large scale integrated circuits in the next 5 to 10 years. As a core subsystem in lithography, research progress of key technologies of the projection objective opto-mechanical systems affects its performance directly. The current demand for 193 nm immersion projection objective in integrated circuit manufacturing is analyzed in the paper. Research status of objective key technologies are elaborated which including exposure system design, lens mount, lens displacement adjustment, active lens, exchangeable elements and numerical aperture (NA) regulation methods. The key scientific issues that hinder the future development of objective lenses are refined. Currently, the mechanism and correction strategy of high-order thermal aberrations need further clarify in 193 nm immersion lithography. The multi-DOF position and orientation calibration problem should be resolved. To guide the manufacture of high image quality objective lenses, an integrated research method of projection objectives should be achieved. 2017, Science Press. All right reserved.
Indexed Byei
Language中文
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59418
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Zhang, D.,X. Li,D. Rui,et al. Key technology progress of optomechanical systems in 193 nm projection objective[J]. Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica,2017,47(6).
APA Zhang, D.,X. Li,D. Rui,P. Li,&L. Dong and J. Zhang.(2017).Key technology progress of optomechanical systems in 193 nm projection objective.Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica,47(6).
MLA Zhang, D.,et al."Key technology progress of optomechanical systems in 193 nm projection objective".Zhongguo Kexue Jishu Kexue/Scientia Sinica Technologica 47.6(2017).
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