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Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers
Xing, E. B.; J. M. Rong; Y. Zhang; C. Z. Tong; S. C. Tian; L. J. Wang; S. L. Shu; Z. F. Lu; Z. C. Niu and L. J. Wang
2017
发表期刊Journal of Infrared and Millimeter Waves
卷号36期号:3
摘要GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.
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语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59339
专题中科院长春光机所知识产出
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Xing, E. B.,J. M. Rong,Y. Zhang,et al. Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers[J]. Journal of Infrared and Millimeter Waves,2017,36(3).
APA Xing, E. B..,J. M. Rong.,Y. Zhang.,C. Z. Tong.,S. C. Tian.,...&Z. C. Niu and L. J. Wang.(2017).Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers.Journal of Infrared and Millimeter Waves,36(3).
MLA Xing, E. B.,et al."Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers".Journal of Infrared and Millimeter Waves 36.3(2017).
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