Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers

	Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers
	Xing, E. B.; J. M. Rong; Y. Zhang; C. Z. Tong; S. C. Tian; L. J. Wang; S. L. Shu; Z. F. Lu; Z. C. Niu and L. J. Wang
	2017
发表期刊	Journal of Infrared and Millimeter Waves
卷号	36 期号:3
摘要	GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.
收录类别	sci ; ei
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59339
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xing, E. B.,J. M. Rong,Y. Zhang,et al. Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers[J]. Journal of Infrared and Millimeter Waves,2017,36(3).
APA	Xing, E. B..,J. M. Rong.,Y. Zhang.,C. Z. Tong.,S. C. Tian.,...&Z. C. Niu and L. J. Wang.(2017).Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers.Journal of Infrared and Millimeter Waves,36(3).
MLA	Xing, E. B.,et al."Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers".Journal of Infrared and Millimeter Waves 36.3(2017).

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