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Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers
Xing, E. B.; J. M. Rong; Y. Zhang; C. Z. Tong; S. C. Tian; L. J. Wang; S. L. Shu; Z. F. Lu; Z. C. Niu and L. J. Wang
2017
Source PublicationJournal of Infrared and Millimeter Waves
Volume36Issue:3
AbstractGaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.
Indexed Bysci ; ei
Language中文
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59339
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Xing, E. B.,J. M. Rong,Y. Zhang,et al. Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers[J]. Journal of Infrared and Millimeter Waves,2017,36(3).
APA Xing, E. B..,J. M. Rong.,Y. Zhang.,C. Z. Tong.,S. C. Tian.,...&Z. C. Niu and L. J. Wang.(2017).Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers.Journal of Infrared and Millimeter Waves,36(3).
MLA Xing, E. B.,et al."Watt-class low divergence 2 mu m GaSb based broad-area quantum well lasers".Journal of Infrared and Millimeter Waves 36.3(2017).
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