High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection

	High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection
	Wang, L. S.; Y. Lv; J. Lin; Y. Fan; J. L. Zhao; Y. J. Wang and X. Y. Liu
	2017
发表期刊	Nanoscale
卷号	9 期号:20
摘要	Hybrid MoO3/HAT-CN is employed as a hole injection layer (HIL) in green inverted colloidal quantum dot light-emitting devices (QLEDs). The hybrid HILs can be easily prepared and have been found to effectively improve the electroluminescent properties. The best performance device had an HIL of 1.5 nm-thick MoO3/2.5 nm-thick HAT-CN and showed a turn-on voltage of 1.9 V, a maximum current efficiency (CEmax) of 41.3 cd A(-1), and maximum external quantum efficiency of 9.72%. Compared to the corresponding devices with the single MoO3 or HAT-CN interlayer, the CEmax of the hole-only devices was improved by 1.6 or 1.5 times, respectively. The measured electrical performance shows that hole-only devices with hybrid HILs have a smaller leakage current density at low driving voltage and much enhanced hole injection current than the devices with single interlayers. It indicates that much improved electroluminescent efficiency in green inverted QLEDs with hybrid MoO3/HAT-CN orginates from the significant enhancement of hole injection efficiency and suppression of space charge accumulation in the quantum dot-emitting region due to the improved balance of the charge carriers. The hybrid HILs can be extended to other color inverted QLEDs, which are favorable to achieve bright, highly efficient, and color saturation devices for display applications.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59262
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, L. S.,Y. Lv,J. Lin,et al. High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection[J]. Nanoscale,2017,9(20).
APA	Wang, L. S.,Y. Lv,J. Lin,Y. Fan,J. L. Zhao,&Y. J. Wang and X. Y. Liu.(2017).High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection.Nanoscale,9(20).
MLA	Wang, L. S.,et al."High-efficiency inverted quantum dot light-emitting diodes with enhanced hole injection".Nanoscale 9.20(2017).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
High efficiency inve（2432KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载