Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films

	Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films
	Liu, Z.; H. Liu; X. Y. Wang; H. G. Yang and J. S. Gao
	2017
发表期刊	Scientific Reports
卷号	7
摘要	A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al atom doped in silicon improves the formation of the nanocone-like microstructures on the film surface, resulting in a significant decrease in the reflection of incident light. The absorption mechanism is further discussed by experiments and simulated calculations in detail. The results show that the doped Al atoms and Mie resonance formed in the microstructures contribute the broadband super-high absorption.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59109
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu, Z.,H. Liu,X. Y. Wang,et al. Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films[J]. Scientific Reports,2017,7.
APA	Liu, Z.,H. Liu,X. Y. Wang,&H. G. Yang and J. S. Gao.(2017).Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films.Scientific Reports,7.
MLA	Liu, Z.,et al."Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films".Scientific Reports 7(2017).

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