Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures

	Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures
	Li, J. P.; G. Q. Miao; Y. G. Zeng; Z. W. Zhang; D. B. Li; H. Song; H. Jiang; Y. R. Chen; X. J. Sun and Z. M. Li
	2017
发表期刊	Crystengcomm
卷号	19 期号:1
摘要	Large lattice mismatched heterostructures In0.78Ga0.22As/GaAs were grown with a low-temperature (LT) InGaAs buffer. Misfit dislocation arrays were observed at the LT-buffer/GaAs interfaces. Transmission electron microscopy (TEM) was used to investigate the microstructures of the heterointerfaces. The relationship between misfit dislocations and strain relaxation at the interface was analysed. It was found that strain redistribution gives rise to the discrepancy of interfacial structure and misfit strain relaxation for different samples. The experimental results are in favor of the conclusion and confirm the analysis we proposed.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59005
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, J. P.,G. Q. Miao,Y. G. Zeng,et al. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures[J]. Crystengcomm,2017,19(1).
APA	Li, J. P..,G. Q. Miao.,Y. G. Zeng.,Z. W. Zhang.,D. B. Li.,...&X. J. Sun and Z. M. Li.(2017).Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures.Crystengcomm,19(1).
MLA	Li, J. P.,et al."Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures".Crystengcomm 19.1(2017).

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