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Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures
Li, J. P.; G. Q. Miao; Y. G. Zeng; Z. W. Zhang; D. B. Li; H. Song; H. Jiang; Y. R. Chen; X. J. Sun and Z. M. Li
2017
发表期刊Crystengcomm
卷号19期号:1
摘要Large lattice mismatched heterostructures In0.78Ga0.22As/GaAs were grown with a low-temperature (LT) InGaAs buffer. Misfit dislocation arrays were observed at the LT-buffer/GaAs interfaces. Transmission electron microscopy (TEM) was used to investigate the microstructures of the heterointerfaces. The relationship between misfit dislocations and strain relaxation at the interface was analysed. It was found that strain redistribution gives rise to the discrepancy of interfacial structure and misfit strain relaxation for different samples. The experimental results are in favor of the conclusion and confirm the analysis we proposed.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59005
专题中科院长春光机所知识产出
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GB/T 7714
Li, J. P.,G. Q. Miao,Y. G. Zeng,et al. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures[J]. Crystengcomm,2017,19(1).
APA Li, J. P..,G. Q. Miao.,Y. G. Zeng.,Z. W. Zhang.,D. B. Li.,...&X. J. Sun and Z. M. Li.(2017).Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures.Crystengcomm,19(1).
MLA Li, J. P.,et al."Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures".Crystengcomm 19.1(2017).
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