Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC

	Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC
	Jia, Y. P.; L. W. Guo; J. J. Lin; J. W. Yang and X. L. Chen
	2017
发表期刊	Carbon
卷号	114
摘要	Direct growth of self-aligned spindle-shape graphene nanoribbons (GNRs) on SiC(11-20) substrate is demonstrated. It is found all the GNRs are monolayer and one of edges of each endpoint of GNR is along direction of zigzag-edge. The length directions of the GNRs are all coincided with the [0001] direction of SiC due to the anisotropy surface energy of SiC. Furthermore, the doping type of GNRs is p-type and its carrier density is changing with the variation of ribbon width. The size-dependent Fermi level variation in sub-micron scale GNR renders a P-P+P- potential configuration in a single GNR. The existed zigzag edges and a special potential configuration in a single GNR make it promise for fabrication of graphene based devices as triode and spintronic device. (C) 2016 Elsevier Ltd. All rights reserved.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/58961
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jia, Y. P.,L. W. Guo,J. J. Lin,et al. Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC[J]. Carbon,2017,114.
APA	Jia, Y. P.,L. W. Guo,J. J. Lin,&J. W. Yang and X. L. Chen.(2017).Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC.Carbon,114.
MLA	Jia, Y. P.,et al."Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC".Carbon 114(2017).

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