Direct growth of self-aligned spindle-shape graphene nanoribbons (GNRs) on SiC(11-20) substrate is demonstrated. It is found all the GNRs are monolayer and one of edges of each endpoint of GNR is along direction of zigzag-edge. The length directions of the GNRs are all coincided with the [0001] direction of SiC due to the anisotropy surface energy of SiC. Furthermore, the doping type of GNRs is p-type and its carrier density is changing with the variation of ribbon width. The size-dependent Fermi level variation in sub-micron scale GNR renders a P-P+P- potential configuration in a single GNR. The existed zigzag edges and a special potential configuration in a single GNR make it promise for fabrication of graphene based devices as triode and spintronic device. (C) 2016 Elsevier Ltd. All rights reserved.
Jia, Y. P.,L. W. Guo,J. J. Lin,et al. Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC[J]. Carbon,2017,114.
APA
Jia, Y. P.,L. W. Guo,J. J. Lin,&J. W. Yang and X. L. Chen.(2017).Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC.Carbon,114.
MLA
Jia, Y. P.,et al."Direct growth of unidirectional spindle-shaped graphene nanoribbons on SiC".Carbon 114(2017).
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